Application Notes

Click on the Application Note Number to see the note in PDF format

Plasma Impedance

 SmartPIM Application Note 1 (93k)

The total plasma chamber impedance (i.e, the load seen by the match unit) is comprised of the plasma impedance, the plasma to ground impedance, the wafer and substrate impedance, and the RF line impedance. Each of these impedances is complex, with resistive, inductive and capacitive components. By accurately measuring the RF components with the SmartPIM sensor, changes in the load impedance can be accurately monitored. Any change in plasma, wall, or wafer conditions results in a change in measured impedance, revealing information about the plasma process.

SMARTPIM with ImPrint

 SmartPIM Application Note 2 (76k)

Chamber Impedance Finger-printing-ImPrint The RF parameters measured by SmartPIM can be used for fault detection and classification. This application note describes how this techniques works.

Match Unit Diagnostics

 SmartPIM Application Note 3 (124k)

Many plasma process chambers use radio frequency (RF) power to drive the plasma. RF power generators are designed with real output impedance, usually 50Ohm. However, the plasma input impedance is generally complex, with a real component and a reactance that is positive or negative, depending on the configuration. This application note describes how SmartPIM can be used to highlight differences in match unit operation.